Research Article
A Substrate-and-Gate Triggering NMOS Device for High ESD Reliability in Deep Submicrometer Technology
Table 1
(a) Resistance SGTNMOS
with different pickup styles. (b) RC SGTNMOS
with different pickup styles. (c) GGNMOS
with different pickup styles.
(a) |
| Normal pickup Resistance () | 500 | 2 k | 5 k | 10 k | 40 k | 100 k | R-SGT (A) | 3.8 | 3.8 | 3.59 | 3.93 | 3.85 | 3.79 |
| Pickup style () | Butting 1 k | Butting 10 k | Inserted 1 k | Inserted 10 k | | | R-SGT (A) | 3.78 | 3.79 | 3.92 | 3.91 | | |
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|
(b) |
| (/F) | 10 k/20 p | 20 k/10 p | 40 k/5 p | 95 k/1.2 p | Normal RC-SGT (A) | 3.75 | 3.74 | 3.79 | 3.77 |
| Pickup style | Butting | Inserted | | | RC-SGT (A) | 3.75 | 3.75 | | |
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|
(c) |
| (A) | Normal | Butting | Inserted | GGNMOS | 3.04 | 2.92 | 1.09 |
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