Research Article

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Figure 1

(a) Cross-sectional diagram of an HfO2 gated diode. (b) Effect of the depletion region on the reverse current of the gated diode at various gate voltages given a fixed reverse drain voltage .
950439.fig.001a
(a)
950439.fig.001b
(b)