Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

<table><svg height="15.4375" id="M89" style="vertical-align:-3.25792pt" version="1.1" viewbox="0 0 56 15.4375" width="56" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
<g transform="matrix(.012,-0,0,-.012,7.487,15.187)"><path d="M43 650h280q194 0 282 -85q85 -82 85 -215q0 -173 -123 -267q-107 -83 -297 -83h-236v27q65 5 79.5 19.5t14.5 77.5v402q0 45 -6 62.5t-21.5 24t-57.5 9.5v28zM213 547v-416q0 -55 24.5 -75t81.5 -20q133 0 203 86t70 214q0 80 -30 143t-88 97q-66 41 -170 41
q-62 0 -78 -13q-13 -9 -13 -57z" id="x44"></path></g><g transform="matrix(.012,-0,0,-.012,16.233,15.187)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g>
<g transform="matrix(.017,-0,0,-.017,22.5,11.112)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,28.552,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,41.162,15.187)"><path d="M692 302v-28q-45 -6 -54.5 -17t-9.5 -55v-86q0 -62 7 -95q-7 -2 -32 -7.5l-37 -8l-35.5 -7.5t-40.5 -7t-38.5 -4t-40.5 -2q-165 0 -266 93t-101 243q0 84 32 151t86 108t121.5 63t142.5 22q29 0 62.5 -4t52 -7.5t47.5 -10.5t31 -7l15 -156l-28 -6q-17 87 -66.5 121.5
t-128.5 34.5q-117 0 -191 -80.5t-74 -216.5q0 -56 17 -110t49.5 -100.5t87.5 -74.5t124 -28q53 0 87 17q17 9 24.5 23t7.5 43v85q0 54 -15.5 67.5t-89.5 18.5v28h254z" id="x47"></path></g><g transform="matrix(.012,-0,0,-.012,49.67,15.187)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g>
</svg> characteristics of nMOSFETs fabricated with HfO<sub>2</sub> gate dielectrics annealed in N<sub>2</sub> and N<sub>2</sub>/O<sub>2</sub> at 500°C for 60 s. </table>

Advances in Materials Science and Engineering

fig3

Figure 3

Figure 3: Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide 