Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

<table>Channel electron mobility versus effective surface field for the HfO<sub>2</sub> MOSFETs annealed at 500°C for 60 s in N<sub>2</sub> and N<sub>2</sub>/O<sub>2</sub>. </table>

Advances in Materials Science and Engineering

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Figure 4

Figure 4: Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide 