Effects of the Boron-Doped p⁺ Emitter on the Efficiency of the n-Type Silicon Solar Cell

Figure 4

Dependence of the output parameters: (a) short circuit current density, (b) open circuit voltage, (c) fill factor, and (d) efficiency of the cell, on the contact resistance. The doping concentration of boron was set as 5×10¹⁸ atoms/cm³.

(a)

(b)

(c)

(d)