Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method

Table 1

Deposition parameters of ZnO films factors and levels using cathode arc plasma deposition (CAPD).

Substrate	glass
Target	Zinc: 99.99% purity; 100 mm diameter
Base pressure	7×10^−4 torr
Substrate-to-target distance	21 cm
Substrate rotation	2 r.p.m
Substrate temperature	Room temperature
	Level
	1	2	3
A: gas flow ratio (Ar : O2)	1 : 6	1 : 10	1 : 8
B: arc current (A)	50	60	70
C: deposition time (min)	5	10	15