Research Article

Microstructural and Dielectric Properties of Zr Doped Microwave Sintered Synthesized by Sol-Gel Route

Figure 3

Frequency dependence of the dielectric constants and dielectric loss of Zr doped CCTZO ceramics sintered using microwave at 1000°C for 10 min.
187420.fig.003a
(a)
187420.fig.003b
(b)