Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET

<table>Variation of drain noise coefficient <svg height="9.04777pt" id="M163" style="vertical-align:-0.04981995pt" version="1.1" viewbox="-0.0498162 -8.99795 8.4902 9.04777" width="8.4902pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M600 480C600 590 528 650 384 650H143L137 622C222 614 225 607 210 531L130 127C113 41 106 36 23 28L17 0H294L300 28C204 36 195 42 212 127L243 284L314 263C327 263 339 263 352 264C465 271 600 337 600 480ZM508 481C508 351 402 304 329 304C289 304 265 311 250 317L295 559C302 594 310 606 323 611C335 616 350 619 367 619C455 619 508 573 508 481Z" id="g113-81"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="617" vert-adv-y="617"></glyph.data></g></svg> with drain current.</table>

Advances in Materials Science and Engineering

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Figure 13

Figure 13: Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET 