Optical and Electrical Properties of Ag-Doped In₂S₃ Thin Films Prepared by Thermal Evaporation

Table 3

Electrical properties of the In₂S₃:Ag films with different dopant levels.

Ag at.%	Resistivity	Carrier concentration
	(0.1 Ω⋅cm)	(10^18 cm^−3)
0	~1.0 × 10^4	~1.0 × 10^−5
0.08	3.387	0.8918
0.12	2.920	1.047
0.20	1.467	2.083
0.27	6.691	3.780
0.29	0.5478	4.529
0.36	0.7449	2.450
0.48	1.258	2.516
0.57	2.056	2.114
0.64	2.120	2.403