Bipolar Switching Characteristics of RRAM Cells with CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> Film

<table><i>I-V</i> characteristics of the CBTi144 RRAM cell without and with 450–550°C RTA.</table>

Advances in Materials Science and Engineering

Figure 5: Bipolar Switching Characteristics of RRAM Cells with CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> Film 