Bipolar Switching Characteristics of RRAM Cells with CaBi₄Ti₄O₁₅ Film

Figure 6

Current conduction mechanisms of the Al/CBTi144/ITO/glass RRAM cell annealed at 450°C: (a) in the entire switching operation, (b) during the Set process, and (c) during the Reset process.

(a)

(b)

(c)