Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices

<table>Variation of <svg height="12.4006pt" id="M88" style="vertical-align:-3.377501pt" version="1.1" viewbox="0 -9.0231 16.8336 12.4006" width="16.8336pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M673 297H417L411 270C517 261 522 258 506 183L487 92C476 38 428 19 360 19C207 19 123 132 123 287C123 472 243 631 441 631C557 631 617 583 617 469L647 472C650 545 655 604 658 632C625 643 554 666 467 666C201 666 23 502 23 278C23 90 156 -16 339 -16C410 -16 501 6 569 24C566 43 567 70 573 101L589 183C604 259 607 262 667 271L673 297Z" id="g113-72"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="684" vert-adv-y="684"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,9.199,3.264)"><path d="M781 91L765 118C733 86 702 70 693 70C686 70 685 77 692 106L738 297C772 439 736 451 712 451S675 445 647 431C605 410 526 356 452 257H450L459 294C491 426 459 451 429 451C403 451 386 445 361 431C312 404 239 343 170 253H168L188 333C208 411 205 451 175 451C148 451 85 417 24 346L39 318C57 338 100 374 112 374C120 374 122 372 115 339C91 226 62 112 28 -6L37 -12C59 -4 87 3 114 6C125 68 142 127 154 168C184 227 316 383 372 383C397 383 396 366 381 289C362 192 338 92 312 -6L317 -12C339 -5 367 3 396 6L434 170C468 234 598 383 650 383C668 383 676 369 664 319L609 90C593 23 600 -12 629 -12C654 -12 722 23 781 91Z" id="g50-110"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="805" vert-adv-y="805"></glyph.data></g></svg> with frequency.</table>

Advances in Materials Science and Engineering

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Figure 4

Figure 4: Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices 

Advances in Materials Science and Engineering

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Figure 4

Study of Interface Charge Densities for ZrO₂ and HfO₂ Based Metal-Oxide-Semiconductor Devices