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Advances in Materials Science and Engineering
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Advances in Materials Science and Engineering
/
2014
/
Article
/
Tab 3
/
Research Article
Study of Interface Charge Densities for ZrO
2
and HfO
2
Based Metal-Oxide-Semiconductor Devices
Table 3
value for ZrO
2
and HfO
2
at different EOT at 1 MHz.
EOT (nm)
ZrO
2
(cm
−2
ev
−1
)
HfO
2
(cm
−2
ev
−1
)
1.77
2.65
3.54