Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO<sub><b>2</b></sub> Films

<table>FTIR analysis of the deposited SiO<sub>2</sub> and Cu:SiO<sub>2</sub> films.</table>

Advances in Materials Science and Engineering

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Figure 2

Figure 2: Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO<sub><b>2</b></sub> Films 

Advances in Materials Science and Engineering

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

Figure 2

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO₂ Films