About this Journal Submit a Manuscript Table of Contents
Advances in Materials Science and Engineering
Volume 2014 (2014), Article ID 691967, 8 pages
http://dx.doi.org/10.1155/2014/691967
Research Article

Synthesis and Characterization of SiO2 Nanoparticles and Their Efficacy in Chemical Mechanical Polishing Steel Substrate

1Department of Vehicle Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 10643, Taiwan
2Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 10643, Taiwan
3Department of Vehicle Engineering, Army Academy, 750 Longdong Road, Taoyuan 32092, Taiwan

Received 12 September 2013; Revised 9 February 2014; Accepted 23 February 2014; Published 27 March 2014

Academic Editor: Ho Chang

Copyright © 2014 M. J. Kao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Y. Ahn, J.-Y. Yoon, C.-W. Baek, and Y.-K. Kim, “Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction,” Wear, vol. 257, no. 7-8, pp. 785–789, 2004. View at Publisher · View at Google Scholar · View at Scopus
  2. D. G. Thakurta, S. Sundararajan, D. W. Schwendeman, S. P. Murarka, and W. N. Gill, “Two-dimensional wafer-scale chemical mechanical planarization models based on lubrication theory and mass transport,” Journal of the Electrochemical Society, vol. 146, no. 2, pp. 761–766, 1999. View at Scopus
  3. P. H. Chen, B. W. Huang, and H.-C. Shih, “A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing,” Thin Solid Films, vol. 476, no. 1, pp. 130–136, 2005. View at Publisher · View at Google Scholar · View at Scopus
  4. T. Y. Kwon, M. Ramachandran, and J. G. Park, “Scratch formation and its mechanism in chemical mechanical planarization (CMP),” Friction, vol. 1, no. 4, pp. 279–305, 2013.
  5. D. W. Zhao and X. C. Lu, “Chemical mechanical polishing: theory and experiment,” Friction, vol. 1, no. 4, pp. 306–326, 2013.
  6. R. Lindberg, J. Sjöblom, and G. Sundholm, “Preparation of silica particles utilizing the sol-gel and the emulsion-gel processes,” Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 99, no. 1, pp. 79–88, 1995. View at Publisher · View at Google Scholar · View at Scopus
  7. W. Stöber, A. Fink, and E. Bohn, “Controlled growth of monodisperse silica spheres in the micron size range,” Journal of Colloid and Interface Science, vol. 26, no. 1, pp. 62–69, 1968. View at Publisher · View at Google Scholar · View at Scopus
  8. M.-H. Oh, J.-S. Nho, S.-B. Cho, J.-S. Lee, and R. K. Singh, “Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride CMP,” Powder Technology, vol. 206, no. 3, pp. 239–245, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. Y.-J. Seo and W.-S. Lee, “Effects of different oxidizers on the W-CMP performance,” Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 118, no. 1–3, pp. 281–284, 2005. View at Publisher · View at Google Scholar · View at Scopus
  10. J. Larsen-Basse and H. Liang, “Probable role of abrasion in chemo-mechanical polishing of tungsten,” Wear, vol. 233–235, pp. 647–654, 1999. View at Publisher · View at Google Scholar · View at Scopus
  11. P. Zhang and H. Lei, “Preparation of alumina/silica core-shell abrasives and their CMP behavior,” Applied Surface Science, vol. 253, no. 21, pp. 8754–8761, 2007. View at Publisher · View at Google Scholar · View at Scopus
  12. N.-H. Kim, Y.-J. Seo, and W.-S. Lee, “Temperature effects of pad conditioning process on oxide CMP: polishing pad, slurry characteristics, and surface reactions,” Microelectronic Engineering, vol. 83, no. 2, pp. 362–370, 2006. View at Publisher · View at Google Scholar · View at Scopus
  13. Y. Xie and B. Bhushan, “Effects of particle size, polishing pad and contact pressure in free abrasive polishing,” Wear, vol. 200, no. 1-2, pp. 281–295, 1996. View at Publisher · View at Google Scholar · View at Scopus
  14. J. Luo and D. A. Dornfeld, “Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification,” IEEE Transactions on Semiconductor Manufacturing, vol. 16, no. 3, pp. 469–476, 2003. View at Publisher · View at Google Scholar · View at Scopus
  15. G. B. Basim, J. J. Adler, U. Mahajan, R. K. Singh, and B. M. Moudgil, “Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects,” Journal of the Electrochemical Society, vol. 147, no. 9, pp. 3523–3528, 2000. View at Publisher · View at Google Scholar · View at Scopus
  16. L. Zhong, J. Yang, K. Holland et al., “A static model for scratches generated during aluminum chemical-mechanical polishing process: orbital technology,” Japanese Journal of Applied Physics, vol. 38, no. 4, pp. 1932–1938, 1999. View at Scopus
  17. T. Satoh, M. Akitaya, M. Konno, and S. Saito, “Particle size distributions produced by hydrolysis and condensation of tetraethylorthosilicate,” Journal of Chemical Engineering of Japan, vol. 30, no. 4, pp. 759–762, 1997. View at Scopus
  18. L. Zhao, J.-G. Yu, B. Cheng, and X.-J. Zhao, “Preparation and formation mechanisms of monodispersed silicon dioxide spherical particles,” Huaxue Xuebao, vol. 61, no. 4, pp. 562–566, 2003. View at Scopus
  19. H. Lei and J. Luo, “CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation,” Wear, vol. 257, no. 5-6, pp. 461–470, 2004. View at Publisher · View at Google Scholar · View at Scopus
  20. Y. Liu, K. Zhang, F. Wang, and W. Di, “Investigation on the final polishing slurry and technique of silicon substrate in ULSI,” Microelectronic Engineering, vol. 66, no. 1–4, pp. 438–444, 2003. View at Publisher · View at Google Scholar · View at Scopus