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Advances in Materials Science and Engineering
Volume 2014 (2014), Article ID 948708, 6 pages
http://dx.doi.org/10.1155/2014/948708
Research Article

Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Faculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, Germany

Received 16 February 2014; Accepted 9 March 2014; Published 6 April 2014

Academic Editor: Feng Zhao

Copyright © 2014 Robert Damian Lawrowski et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Robert Damian Lawrowski, Christian Prommesberger, Christoph Langer, Florian Dams, and Rupert Schreiner, “Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching,” Advances in Materials Science and Engineering, vol. 2014, Article ID 948708, 6 pages, 2014. doi:10.1155/2014/948708