Research Article

Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Figure 2

Schematic of the structured cathode fabrication process (simulated with IntelliSuite). (a) Thermal growth of SiO2 layer. (b) Photolithography with AZ5214. (c) Transferring of the structures into SiO2 by reactive-ion etching. (d) Reactive-ion etching of the bulk Si. (e) Sharpening of the tips by wet thermal oxidation. (f) Wet chemical removal of SiO2.
948708.fig.002a
(a) Oxidation
948708.fig.002b
(b) Photolithography
948708.fig.002c
(c) RIE of SiO2
948708.fig.002d
(d) RIE of Si
948708.fig.002e
(e) Sharpening Oxidation
948708.fig.002f
(f) Si-tip-emitter