Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="948708.fig.003a" src="https://static.hindawi.com/articles/amse/volume-2014/948708/figures/948708.fig.003a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Photolithography</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="948708.fig.003b" src="https://static.hindawi.com/articles/amse/volume-2014/948708/figures/948708.fig.003b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>SiO<sub>2</sub>-RIE-etching</td></tr></table></td></tr><tr class="fig-image" id="c"><td><img alt="948708.fig.003c" src="https://static.hindawi.com/articles/amse/volume-2014/948708/figures/948708.fig.003c.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(c) </b>Si-RIE-etching</td></tr></table></td></tr><tr class="fig-image" id="d"><td><img alt="948708.fig.003d" src="https://static.hindawi.com/articles/amse/volume-2014/948708/figures/948708.fig.003d.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(d) </b>Si-tip-emitter</td></tr></table></td></tr></table>

<table>SEM images of the structured cathode fabrication process. (a) Developed photoresist. (b) Patterned SiO<sub>2</sub> disks. (c) Etched bulk Si. (d) Final emitter.</table>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching 