Advances in Materials Science and Engineering

Research Article

Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Figure 7

Variation of the anisotropic factor from the averaged value of anisotropy on the quarter at different etch parameters: (a) and (b) 90 mTorr, 60 s, 90 W, (c) and (d) 50 mTorr, 90 s, 90 W. Values in brackets are the root mean square deviation and the arithmetic mean of the variation.
948708.fig.007a
(a) Arrays near wafer center (rms deviation: 0.063) (mean value: −0.029)
948708.fig.007b
(b) Arrays near wafer edge (rms deviation: 0.075) (mean value: 0.061)
948708.fig.007c
(c) Arrays near wafer center (rms deviation: 0.048) (mean value: 0.016)
948708.fig.007d
(d) Arrays near wafer edge (rms deviation: 0.049) (mean value: −0.023)