Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Figure 8

SEM images of the emitters after RIE of Si at different etching parameters: (a) and (b) 90 mTorr, 60 s, 90 W, (c) and (d) 50 mTorr, 90 s, 90 W.

(a) Near wafer center

(b) Near wafer edge

(c) Near wafer center

(d) Near wafer edge