Research Article
Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3 Bilayers
Figure 1
(a) XRD patterns of /PZT/LSMO/STO heterostructures, in which the layers were deposited in 2.0 Pa oxygen at various temperatures from 30 to 300°C; (b) typical surface morphology of /PZT/LSMO/STO heterostructures; (c) hysteresis loop of a 50 nm thick PZT film.
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