Feasible Time Evolution Model That Predicts Breakdown in Thin SiO<sub>2</sub> Films within Unstressed Interval after Constant-Current Stress

<div>Experimental procedure of constant-current stress application.<i> Every</i> CCS condition is 500 mA/c<svg height="12.1279pt" id="M37" style="vertical-align:-0.04979992pt" version="1.1" viewbox="-0.0498162 -12.0781 16.3712 12.1279" width="16.3712pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M797 0V26C739 32 732 36 732 103V296C732 394 682 449 605 449C576 449 550 437 529 423C504 407 475 389 446 366C425 418 382 449 334 449C303 449 279 437 253 421C222 403 201 385 180 371V452C135 432 85 419 41 411V388C99 379 102 374 102 310V103C102 38 93 32 27 26V0H238V26C189 32 180 38 180 103V338C210 363 250 390 289 390C351 390 377 348 377 275V103C377 37 368 32 306 26V0H520V26C465 32 456 38 456 101V296C456 314 455 326 453 338C491 369 529 390 565 390C628 390 653 345 653 274V107C653 36 642 32 583 26V0H797Z" id="g190-110"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="819" 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Advances in Materials Science and Engineering

fig1

Figure 1

Figure 1: Feasible Time Evolution Model That Predicts Breakdown in Thin SiO<sub>2</sub> Films within Unstressed Interval after Constant-Current Stress 

Advances in Materials Science and Engineering

Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress

Figure 1

Feasible Time Evolution Model That Predicts Breakdown in Thin SiO₂ Films within Unstressed Interval after Constant-Current Stress