Research Article
Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress
Figure 5
Time evolution of gate current after a single stress application. The CCS condition is 500 mA/c in all experiments. is 6 C/c or 12 C/c. Symbols are measured results, and lines are the results calculated using (8). The characteristic time constant () is sec for C/c and sec for = 12 C/c.