Research Article

Modeling of Point Defects Annihilation in Multilayered Cu/Nb Composites under Irradiation

Figure 5

Temporal profiles of occupation probability of (a) vacancy and (b) SIA traps, and average concentrations of (c) vacancies and (d) SIAs in a single layer of copper bounded by two interfaces acting as variable-biased sinks for different values of the surface recombination coefficient, ( K;  m;  m−3 s−1).
(a)
(b)
(c)
(d)