Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

<div>(a) SEM micrograph of the surface for β-FeSi2 thin films grown by RFMS on Si(111) substrates and (b) a cross-sectional SEM micrograph of the β-FeSi2 thin films on Si(111) substrate.</div>

Advances in Materials Science and Engineering

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Figure 2: Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Figure 2 | Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 