Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

<div>Relationship between <svg height="11.5564pt" id="M108" style="vertical-align:-2.26807pt" version="1.1" viewbox="-0.0498162 -9.28833 66.596 11.5564" width="66.596pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M517 51L485 54C448 58 441 63 441 115V712C404 700 337 684 285 678V653C357 648 362 645 362 580V437C339 446 309 449 295 449C159 449 38 340 38 201C38 61 143 -12 223 -12C234 -12 261 -6 301 17L362 53V-12C420 9 495 22 517 26V51ZM362 85C338 67 301 51 266 51C201 51 128 109 128 228C128 373 212 411 259 411C296 411 338 395 362 360V85Z" id="g121-98"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="528" vert-adv-y="528"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,6.864,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 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650Z" id="g113-75"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="452" vert-adv-y="452"></glyph.data></g></svg> (left axis) and <svg height="11.5564pt" id="M109" style="vertical-align:-2.26807pt" version="1.1" viewbox="-0.0498162 -9.28833 36.5317 11.5564" width="36.5317pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M828 650H570L564 622C646 614 650 609 634 524L604 366H253L281 524C296 608 308 615 382 622L388 650H132L126 622C211 615 214 609 198 524L121 122C106 42 102 35 23 28L17 0H276L282 28C196 35 191 40 206 122L243 324H597L559 123C544 42 537 35 452 28L446 0H710L716 28C632 35 628 43 643 122L719 524C735 610 741 615 822 622L828 650Z" id="g113-73"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="840" vert-adv-y="840"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.923,0)"><path d="M300 -147C201 -63 143 98 143 270S200 602 300 686L282 710C136 610 70 450 70 271V270C70 89 136 -72 282 -170L300 -147Z" id="g113-41"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="346" vert-adv-y="346"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,15.421,0)"><path d="M429 650H175L169 622C251 614 259 612 244 532L174 152C163 91 152 37 135 -6C109 -72 67 -101 23 -113L33 -144C45 -143 73 -134 102 -119C186 -76 229 -1 254 133L327 532C341 609 347 613 423 622L429 650Z" id="g113-75"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="452" vert-adv-y="452"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,21.3,0)"><path d="M275 270C275 450 212 609 64 710L45 686C145 604 203 442 203 270S147 -63 45 -147L64 -170C213 -68 275 89 275 270Z" id="g113-42"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="346" vert-adv-y="346"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,25.798,0)"><path d="M300 253H71L57 198H286L300 253Z" id="g190-46"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="356" vert-adv-y="356"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,30.444,0)"><path d="M429 650H175L169 622C251 614 259 612 244 532L174 152C163 91 152 37 135 -6C109 -72 67 -101 23 -113L33 -144C45 -143 73 -134 102 -119C186 -76 229 -1 254 133L327 532C341 609 347 613 423 622L429 650Z" id="g113-75"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="452" vert-adv-y="452"></glyph.data></g></svg> (right axis) at temperatures of (a) 300 K and (b) 20 K.</div>

Advances in Materials Science and Engineering

fig6

Figure 6

Figure 6: Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 

Figure 6 | Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 