Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

<div>Plots of<i> F</i>(<i>V</i>)-<i>V</i> at 20 K (left axis) and at 300 K (right axis).</div>

Advances in Materials Science and Engineering

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Figure 7

Figure 7: Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 

Figure 7 | Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 