Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

<div>Energy band diagram that indicates the spikes in conduction and valence bands for n-type <i>β</i>-FeSi<sub>2</sub>/p-type Si heterojunctions.</div>

Advances in Materials Science and Engineering

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Figure 8

Figure 8: Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 

Figure 8 | Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 