PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 1
Calculated dependence of surface recombination rate as a function of applied surface charge upon p-type surface with different surface doping. This calculation was performed using the extended Girisch model [5, 6] with a bulk injection level 1012 cm-3 and assuming a single level defect at midgap with equal capture cross sections.
