PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 7
as a function of applied charge density for a diffused annealed sample with 019 cm-3. PECVD SiNx was deposited at 450°C and the sample was subsequently annealed (30 mins 400°C in ). Negative and positive charge application is denoted by filled and empty symbols, respectively. The black solid line is a fit to the data, while the red-dashed line shows the modelling results obtained from the Girisch model [5, 6], assuming a continuum of defect levels with midgap ratio 102 and = 010 cm-2eV-1. This density and capture cross sections of the defects were adjusted to fit the experimental data.
