About this Journal Submit a Manuscript Table of Contents
Advances in OptoElectronics
Volume 2010 (2010), Article ID 619571, 5 pages
Research Article

Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

1Department of Physics, Naval Postgraduate School, Monterey, CA 93943, USA
2Department of Radiation Instruments, Institute of Scintillation Materials, 61001 Kharkov, Ukraine
3Theoretical Department, Institute of Single Crystals, 61001 Kharkov, Ukraine

Received 1 September 2010; Revised 30 October 2010; Accepted 1 November 2010

Academic Editor: Xian Cao

Copyright © 2010 V. Naval et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm) and UV-B (280–320 nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.