About this Journal Submit a Manuscript Table of Contents
Advances in OptoElectronics
Volume 2010 (2010), Article ID 619571, 5 pages
http://dx.doi.org/10.1155/2010/619571
Research Article

Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

1Department of Physics, Naval Postgraduate School, Monterey, CA 93943, USA
2Department of Radiation Instruments, Institute of Scintillation Materials, 61001 Kharkov, Ukraine
3Theoretical Department, Institute of Single Crystals, 61001 Kharkov, Ukraine

Received 1 September 2010; Revised 30 October 2010; Accepted 1 November 2010

Academic Editor: Xian Cao

Copyright © 2010 V. Naval et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semiconductor Science and Technology, vol. 18, no. 4, pp. R33–R51, 2003. View at Publisher · View at Google Scholar · View at Scopus
  2. A. BenMoussa, A. Soltani, and A. Soltani, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond and Related Materials, vol. 18, no. 5–8, pp. 860–864, 2009. View at Publisher · View at Google Scholar · View at Scopus
  3. S. N. Mohammed, A. A. Salvazdor, and H. Markoc, “Emerging GaN based devices,” Proceeding of IEEE, vol. 83, pp. 1306–1355, 1995.
  4. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi, “AlxGa1xN(0x1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition,” Applied Physics Letters, vol. 70, no. 8, pp. 949–951, 1997. View at Scopus
  5. A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, and E. Muñoz, “Modeling of the spectral response of AlxGa1xN schottky ultraviolet photodetectors,” Journal of Applied Physics, vol. 87, no. 12, pp. 8286–8290, 2000. View at Scopus
  6. M. Y. Chen and C. C. Chang, “Integrated a ZnSe MSM photodiode and an InGaP/GaAs hbt on a GaAs substrate for high sensitivity short wavelength photodetector,” IEEE Sensors Journal, vol. 9, no. 8, pp. 902–907, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. L. A. Kosyachenko, V. M. Sklyarchuk, and Y. F. Sklyarchuk, “Electrical and photoelectric properties of Au-SiC schottky barrier diodes,” Solid-State Electronics, vol. 42, no. 1, pp. 145–151, 1998. View at Scopus
  8. L. S. Yu, D. J. Qiao, Q. J. Xing, S. S. Lau, K. S. Boutros, and J. M. Redwing, “Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates,” Applied Physics Letters, vol. 73, no. 2, pp. 238–240, 1998. View at Publisher · View at Google Scholar · View at Scopus
  9. E. Monroy, F. Calle, and F. Calle, “Analysis and modeling of AlxGa1xN-based Schottky barrier photodiodes,” Journal of Applied Physics, vol. 88, no. 4, pp. 2081–2091, 2000. View at Scopus
  10. V. P. Makhnii and V. V. Melnik, “Photoelectric properties of Ni-ZnSe contacts,” Semiconductors, vol. 29, pp. 764–766, 1995.
  11. A. Gerhard, J. Nürnberger, K. Schüll, V. Hock, C. Schumacher, M. Ehinger, and W. Faschinger, “ZnSe-based MBE-grown photodiodes,” Journal of Crystal Growth, vol. 184-185, pp. 1319–1323, 1998. View at Scopus
  12. V. P. Makhnii, “Schottky barrier UV photodetectors based on zinc selenide,” Technical Physics, vol. 43, no. 9, pp. 1119–1120, 1998. View at Publisher · View at Google Scholar · View at Scopus
  13. F. Vigué, P. de Mierry, J. P. Faurie, E. Monroy, F. Calle, and E. Muñoz, “High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range,” Electronics Letters, vol. 36, no. 9, pp. 826–827, 2000. View at Publisher · View at Google Scholar · View at Scopus
  14. E. Monroy, F. Vigué, F. Calle, J. I. Izpura, E. Muñoz, and J. P. Faurie, “Time response analysis of ZnSe-based Schottky barrier photodetectors,” Applied Physics Letters, vol. 77, no. 17, pp. 2761–2763, 2000. View at Scopus
  15. A. Bouhdada, M. Hanzaz, F. Vigué, and J. P. Faurie, “Electrical and optical proprieties of photodiodes based on ZnSe material,” Applied Physics Letters, vol. 83, no. 1, pp. 171–173, 2003. View at Publisher · View at Google Scholar · View at Scopus
  16. S. J. Chang, T. K. Lin, and T. K. Lin, “Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes,” Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 127, no. 2-3, pp. 164–168, 2006. View at Publisher · View at Google Scholar · View at Scopus
  17. M. Hanzaz, A. Bouhdada, F. Vigue, and J. P. Faurie, “ZnSe-and GaN-based schottky barrier photodetectors for blue and ultraviolet detection,” Journal of Active and Passive Electronic Devices, vol. 2, pp. 165–169, 2007.
  18. T. K. Lin, S. J. Chang, and S. J. Chang, “Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers,” Solid-State Electronics, vol. 50, no. 5, pp. 750–753, 2006. View at Publisher · View at Google Scholar · View at Scopus
  19. V. P. Makhnii and V. V. Melnik, “Surface barrier diode based on zinc selenide with a passivating zinc oxide film,” Technical Physics Letters, vol. 29, no. 9, pp. 712–713, 2003. View at Publisher · View at Google Scholar · View at Scopus
  20. V. Bousquet, E. Tournié, and J. P. Faurie, “Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers,” Journal of Crystal Growth, vol. 192, no. 1-2, pp. 102–108, 1998. View at Scopus
  21. V. S. Fomenko, Handbook of Thermionic Properties, Plenum, New York, NY, USA, 1996.
  22. M. Vos, F. Xu, J. H. Weaver, and H. Cheng, “Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100),” Applied Physics Letters, vol. 53, no. 16, pp. 1530–1532, 1988. View at Publisher · View at Google Scholar · View at Scopus