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Advances in OptoElectronics
Volume 2011 (2011), Article ID 145012, 8 pages
http://dx.doi.org/10.1155/2011/145012
Research Article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Department of Physics, Lancaster University, Lancaster LA1 4YB, UK

Received 23 April 2011; Revised 10 June 2011; Accepted 5 July 2011

Academic Editor: Yuh-Jen Cheng

Copyright © 2011 P. J. Carrington et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

P. J. Carrington, M. de la Mare, K. J. Cheetham, Q. Zhuang, and A. Krier, “Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes,” Advances in OptoElectronics, vol. 2011, Article ID 145012, 8 pages, 2011. doi:10.1155/2011/145012