Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
Figure 1
(a) Schematic diagram of the InAs0.942Sb0.05N0.008/InAs MQW LED structure. (b) The calculated 4 K (flat) band structure. The table lists the transitions from the conduction band to the heavy and light hole ground states, Ec-Ehh1 and Ec-Elh1, Ehh1-InAs, and so forth correspond to the carrier localization energies.
