Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Figure 10

Calculated 4 K values of (a) e-hh1 transition energy (b) hh1 localization energy and (c) electron localization energy for different contents of Sb and N in a InAs_1-x-ySb_xN_y/InAs QW.

(a)

(b)

(c)