About this Journal Submit a Manuscript Table of Contents
Advances in OptoElectronics
Volume 2011 (2011), Article ID 145012, 8 pages
http://dx.doi.org/10.1155/2011/145012
Research Article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Department of Physics, Lancaster University, Lancaster LA1 4YB, UK

Received 23 April 2011; Revised 10 June 2011; Accepted 5 July 2011

Academic Editor: Yuh-Jen Cheng

Copyright © 2011 P. J. Carrington et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. P. J. Carrington, V. A. Solov'ev, Q. Zhuang, A. Krier, and S. V. Ivanov, “Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes,” Applied Physics Letters, vol. 93, no. 9, Article ID 091101, 2008. View at Publisher · View at Google Scholar · View at Scopus
  2. N. B. Cook and A. Krier, “Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes,” Applied Physics Letters, vol. 95, no. 2, Article ID 021110, 2009. View at Publisher · View at Google Scholar · View at Scopus
  3. B. I. Mirza, G. R. Nash, S. J. Smith et al., “Recombination processes in midinfrared AlxIn1xSb light-emitting diodes,” Journal of Applied Physics, vol. 104, no. 6, Article ID 063113, 2008. View at Publisher · View at Google Scholar · View at Scopus
  4. S. Suchalkin, S. Jung, G. Kipshidze et al., “GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions,” Applied Physics Letters, vol. 93, no. 8, Article ID 081107, 2008. View at Publisher · View at Google Scholar · View at Scopus
  5. E. J. Koerperick, J. T. Olesberg, T. F. Boggess et al., “InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 μm,” Applied Physics Letters, vol. 92, no. 12, Article ID 121106, 2008. View at Publisher · View at Google Scholar · View at Scopus
  6. P. J. Carrington, Q. Zhuang, M. Yin, and A. Krier, “Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes,” Semiconductor Science and Technology, vol. 24, no. 7, Article ID 075001, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. B. N. Murdin, M. Kamal-Saadi, A. Lindsay et al., “Auger recombination in long-wavelength infrared InNxSb1x alloys,” Applied Physics Letters, vol. 78, no. 11, pp. 1568–1570, 2001. View at Publisher · View at Google Scholar · View at Scopus
  8. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics,” Applied Physics Letters, vol. 93, no. 12, Article ID 121903, 2008. View at Publisher · View at Google Scholar
  9. M. de La Mare, P. J. Carrington, R. Wheatley et al., “Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range,” Journal of Physics D, vol. 43, no. 34, Article ID 345103, 2010. View at Publisher · View at Google Scholar · View at Scopus
  10. W. Y. Uen, S. M. Liao, C. T. Lin, and C. H. Wu, “Low-temperature electrical characterizations of InAs1xySbyPx photodiodes fabricated by liquid-phase epitaxy,” Solid-State Electronics, vol. 46, no. 9, pp. 1405–1409, 2002. View at Publisher · View at Google Scholar · View at Scopus
  11. K. J. Cheetham, P. J. Carrington, N. B. Cook, and A. Krier, “Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes,” Solar Energy Materials and Solar Cells, vol. 95, no. 2, pp. 534–537, 2011. View at Publisher · View at Google Scholar · View at Scopus
  12. N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, and N. M. Stus', “Flip-chip LEDs with deep mesa emitting at 4.2 μm,” Semiconductors, vol. 40, no. 6, pp. 697–703, 2006. View at Publisher · View at Google Scholar · View at Scopus
  13. J. Hoffmann, T. Lehnert, D. Hoffmann, and H. Fouckhardt, “Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes,” Semiconductor Science and Technology, vol. 24, no. 6, article 065008, 2009. View at Publisher · View at Google Scholar
  14. Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica, vol. 34, no. 1, pp. 149–154, 1967. View at Scopus
  15. Z. M. Fang, K. Y. Ma, D. H. Jaw, R. M. Cohen, and G. B. Stringfellow, “Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy,” Journal of Applied Physics, vol. 67, no. 11, pp. 7034–7039, 1990. View at Publisher · View at Google Scholar · View at Scopus
  16. A. M. R Godenir, Novel dilute nitride semiconductor materials for mid infrared applications, Ph.D. thesis, Lancaster University, Lancaster, UK, 2008.
  17. F. I. Lai, S. Y. Kuo, J. S. Wang et al., “Temperature-dependent optical properties of In0.34Ga0.66As1xNx/GaAs single quantum well with high nitrogen content for 1.55 μm application grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 291, no. 1, pp. 27–33, 2006. View at Publisher · View at Google Scholar · View at Scopus
  18. G. R. Nash, M. K. Haigh, H. R. Hardaway et al., “InSbAlInSb quantum-well light-emitting diodes,” Applied Physics Letters, vol. 88, no. 5, Article ID 051107, pp. 1–3, 2006. View at Publisher · View at Google Scholar · View at Scopus
  19. S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O'Reilly, and P. J. A. Thijs, “The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers,” IEEE Photonics Technology Letters, vol. 10, no. 8, pp. 1076–1078, 1998. View at Scopus