- About this Journal
- Abstracting and Indexing
- Aims and Scope
- Article Processing Charges
- Articles in Press
- Author Guidelines
- Bibliographic Information
- Citations to this Journal
- Contact Information
- Editorial Board
- Editorial Workflow
- Free eTOC Alerts
- Publication Ethics
- Reviewers Acknowledgment
- Submit a Manuscript
- Subscription Information
- Table of Contents
Advances in OptoElectronics
Volume 2011 (2011), Article ID 459130, 6 pages
doi:10.1155/2011/459130
New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application
1Solid State Infrared Devices, Electron, Central Research Institute, Toreza Avenue, 68, Saint-Petersburg 194223, Russia
2Broadband Home Solutions, Motorola Mobility, Sedova Street 12, Saint-Petersburg 192019, Russia
Received 7 April 2011; Revised 25 May 2011; Accepted 4 July 2011
Academic Editor: Satishchandra B. Ogale
Copyright © 2011 V. G. Ivanov and G. V. Ivanov. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
V. G. Ivanov and G. V. Ivanov, “New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application,” Advances in OptoElectronics, vol. 2011, Article ID 459130, 6 pages, 2011. doi:10.1155/2011/459130