Single-SectionFabry-Perot Mode-Locked Semiconductor Lasers

Table 1

Base wafer epitaxial structure (LM: lattice matched).

#	Step	Thickness (nm)	Doping	Notes
0	n+-doped InP substrate		n+ 1e19
1	InP buffer	500	UID
2	Q1.1	115	UID	LM
3	Q1.2	115	UID	LM
4	Q1.3	122	UID	LM
5	InP ES	15	UID
6	Q1.3	105	UID	LM
7	InP ES	15	UID
8	Active (4QWs)	85	UID	bulk (<150), 6QW
9	InP clad	600	Graded Zn+ to 1e18
10	Q1.3 cap	20	UID	LM
11	InP cap	20	UID