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Advances in OptoElectronics
Volume 2011 (2011), Article ID 896962, 4 pages
http://dx.doi.org/10.1155/2011/896962
Research Article

Modeling of Photoconductivity of Porous Silicon

Ivan Franko National University of L'viv, 50 Dragomanov Street, 79005 Lviv, Ukraine

Received 13 December 2010; Accepted 12 May 2011

Academic Editor: Samir K. Mondal

Copyright © 2011 L. S. Monastyrskii et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.