Table 2: PHEMT heterostructure for FET operating in 10–40 GHz range.

GaAs:Si  cm−340 nm
i- (>0.23)25 nm
i-GaAs~0.6 nm
δ-Si  cm−2
i-GaAs~0.6 nm
i- 4 nm
i-GaAs1 nm
i- (<0.2)11 nm
i-GaAs30 nm
i- 50 nm
i-GaAs  cm−30.5–0.8  m
CP AlAs/GaAs (1 nm/2 nm) 5
GaAs:Sb100 nm
Fianite substrate400  m