Table 3: Parameters of growth and annealing of the fianite-on-Si films.

Sample of growth, C Annealing, 600 C, 10 min Film thickness, nm Substrate z1 Room Without annealing ~20 Si z2 Room Vacuum ~20 Si z3 Room Oxygen ~20 Si z4 Room Oxygen ~20 Si z5 600 Oxygen ~20 Si