Table 3: Parameters of growth and annealing of the fianite-on-Si films.

Sample of growth, CAnnealing, 600 C, 10 minFilm thickness, nmSubstrate

z1RoomWithout annealing~20Si
z2RoomVacuum~20Si
z3 RoomOxygen~20Si
z4RoomOxygen~20Si
z5600Oxygen~20Si