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Advances in OptoElectronics
Volume 2012 (2012), Article ID 916275, 4 pages
http://dx.doi.org/10.1155/2012/916275
Research Article

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

1Institut für Halbleitertechnik (IHT), University of Stuttgart, 70659 Stuttgart, Germany
2Leibniz-Institut für Innovative Mikroelektronik (IHP), 15236 Frankfurt (Oder), Germany
3Joint Lab IHP/BTU Cottbus, 03013 Cottbus, Germany

Received 18 October 2011; Accepted 12 December 2011

Academic Editor: Ram Gupta

Copyright © 2012 E. Kasper et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, and J. Schulze, “Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes,” Advances in OptoElectronics, vol. 2012, Article ID 916275, 4 pages, 2012. doi:10.1155/2012/916275