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Advances in OptoElectronics
Volume 2012 (2012), Article ID 916275, 4 pages
doi:10.1155/2012/916275
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
1Institut für Halbleitertechnik (IHT), University of Stuttgart, 70659 Stuttgart, Germany
2Leibniz-Institut für Innovative Mikroelektronik (IHP), 15236 Frankfurt (Oder), Germany
3Joint Lab IHP/BTU Cottbus, 03013 Cottbus, Germany
Received 18 October 2011; Accepted 12 December 2011
Academic Editor: Ram Gupta
Copyright © 2012 E. Kasper et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, and J. Schulze, “Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes,” Advances in OptoElectronics, vol. 2012, Article ID 916275, 4 pages, 2012. doi:10.1155/2012/916275