Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices

Figure 4

(a) The ln(𝐼)-𝑉 characteristics for SST/nc-Si:H/Ag Schottky diodes. (b) The 𝜕𝑉/𝜕ln(I)-I curve for the same device. (c) The Cheung function current dependence.

(a)

(b)

(c)