Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Figure 6

(a) Schematic of the -type Te/Te heterojunction structure. (b) The quantum yield spectra at 5.3 and 78 K. Spectra measured at positive and negative biases have a similar profile. Inset shows the schematic band alight (without considering the space charge effect and composition grading at the junction interface) and the dominant optical transition which occurs in Te. (c) The quantum yield spectra at 0.6 V, along with IP fittings (solid line). Inset: comparison of fittings using different energy distribution functions, where is an exponential function, while represents PBA approximation.

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