Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Table 2

GaAs/ photovoltaic detector parameters. The active region consists of a 400 nm thick undoped barrier with constant , a -type GaAs layer (emitter) doped to  cm⁻³, and a flat (SP1001) or graded (SP1005 and SP1007) 80 nm thick barrier ( varies from to ). Figure 8(a) shows the valence band diagram. , , and denote the thickness of emitter, activation energy, and the threshold wavelength of photovoltaic response, respectively.

Sample number				(nm)	(eV)	(μm)
SP1001 (flat-barrier)					0.49	3.9
SP1005 (graded-barrier)					0.37	8.0
SP1007 (graded-barrier)					0.40	8.0