Journals
Publish with us
Publishing partnerships
About us
Blog
Advances in OptoElectronics
Table of Contents
Special Issues
Advances in OptoElectronics
/
2017
/
Article
/
Fig 2
/
Research Article
Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics
Figure 2
A typical IV characteristics of InGaAs/InAlAs mesa-type APD. The IV is measured in reverse polarity at 20°C.