﻿<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>Advances in OptoElectronics</title><link>http://www.hindawi.com</link><description>The latest articles from Hindawi Publishing Corporation</description><copyright>&amp;#169; 2012, Hindawi Publishing Corporation. All rights reserved.</copyright><item><title>Numerical Modeling and Experimental Investigation of the Nonlinear Polarization Rotation Phenomenon in Semiconductor Optical Amplifiers</title><link>http://www.hindawi.com/journals/aoe/2011/143235/</link><description>The focus of this paper is to analyze in detail the nonlinear polarization rotation phenomenon in the Semiconductor Optical Amplifier (SOA) according to the injection conditions. To this end, we have developed a numerical model based on the coupled mode theory and the formalism of Stokes. The obtained results are in agreement with the experimental measurements that have been carried out in free space, which allows optimum control and preservation of the polarization state of the injected and collected signals.</description><Author>Youssef Said and Houria Rezig</Author><copyright>Copyright &amp;#xa9; 2011 Youssef Said and Houria Rezig. All rights reserved.</copyright></item><item><title>Modelling of Output Statistics of Single and &amp;#x02133;-Mode Straight and Curved Er3+:Ti:LiNbO3 Waveguide Amplifiers</title><link>http://www.hindawi.com/journals/aoe/2011/368327/</link><description>A theoretical analysis of some statistical parameters which characterize the Er3+-doped Ti:LiNbO3 single and &amp;#x02133;-mode straight and curved waveguides is presented in this paper. In the derivation and the evaluation of the spectral optical quality factor, the power spectral density, the Fano factor, the statistical fluctuation, and the spontaneous emission factor we used the small gain approximation, and the photon statistics master equation of the linear amplifier (considering that the photon number distribution is determined by the normalized mode intensity profiles which are not uniform in the transversal section of the waveguide), transposed to the case of straight and curved amplifiers. The simulation results show the evolution of the above-mentioned parameters under various pump regimes and waveguide lengths.</description><Author>Niculae N. Puscas</Author><copyright>Copyright &amp;#xa9; 2011 Niculae N. Puscas. All rights reserved.</copyright></item><item><title>Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes</title><link>http://www.hindawi.com/journals/aoe/2011/145012/</link><description>Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56&amp;#x2009;&amp;#x3bc;m at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.</description><Author>P. J. Carrington, M. de la Mare, K. J. Cheetham, Q. Zhuang, and A. Krier</Author><copyright>Copyright &amp;#xa9; 2011 P. J. Carrington et al. All rights reserved.</copyright></item><item><title>New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application</title><link>http://www.hindawi.com/journals/aoe/2011/459130/</link><description>The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED) take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB) as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection&amp;#8212;&amp;#8220;quantum&amp;#8221; and hot electrons gas emission&amp;#8212;has allowed the creation of a superwideband IR detector using standard silicon technology.</description><Author>V. G. Ivanov and G. V. Ivanov</Author><copyright>Copyright &amp;#xa9; 2011 V. G. Ivanov and G. V. Ivanov. All rights reserved.</copyright></item><item><title>Modeling of Photoconductivity of Porous Silicon</title><link>http://www.hindawi.com/journals/aoe/2011/896962/</link><description>The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.</description><Author>L. S. Monastyrskii, B. S. Sokolovskii, M. R. Pavlyk, and P. P. Parandii</Author><copyright>Copyright &amp;#xa9; 2011 L. S. Monastyrskii et al. All rights reserved.</copyright></item><item><title>Dispersion Engineered Silicon Nanocrystal Slot Waveguides for Soliton Ultrafast Optical Processing</title><link>http://www.hindawi.com/journals/aoe/2011/751498/</link><description>We propose, for the first time to our knowledge, the theoretical investigation of silicon nanocrystals-based sandwiched slot waveguides which are dispersion-engineered for exciting optical solitons inside very short structures (only 1.2&amp;#x2009;mm long). Several parametric simulations have been performed by means of finite element method in order to individuate the best waveguide cross-sections for achieving an anomalous dispersion regime around 1550&amp;#x2009;nm.</description><Author>Francesco De Leonardis and Vittorio M. N. Passaro</Author><copyright>Copyright &amp;#xa9; 2011 Francesco De Leonardis and Vittorio M. N. Passaro. All rights reserved.</copyright></item><item><title>Design of Pixellated CMOS Photon Detector for Secondary Electron Detection in the Scanning Electron Microscope</title><link>http://www.hindawi.com/journals/aoe/2011/648487/</link><description>This paper presents a novel method of detecting secondary electrons generated in the scanning electron microscope (SEM). The method suggests that the photomultiplier tube (PMT), traditionally used in the Everhart-Thornley (ET) detector, is to be replaced with a configurable multipixel solid-state photon detector offering the advantages of smaller dimension, lower supply voltage and power requirements, and potentially cheaper product cost. The design of the proposed detector has been implemented using a standard 0.35&amp;#x2009;&amp;#x3bc;m CMOS technology with optical enhancement. This microchip comprises  main circuit constituents of an array of photodiodes connecting to respective noise-optimised transimpedance amplifiers (TIAs), a selector-combiner (SC) circuit, and a postamplifier (PA). The design possesses the capability of detecting photons with low input optical power in the range of 1&amp;#x2009;nW with 100&amp;#x2009;&amp;#x3bc;m &amp;#xd7; 100&amp;#x2009;&amp;#x3bc;m&amp;#x2009;sized photodiodes and achieves a total amplification of 180&amp;#x2009;dB&amp;#x3a9; at the output.</description><Author>Joon Huang Chuah and David Holburn</Author><copyright>Copyright &amp;#xa9; 2011 Joon Huang Chuah and David Holburn. All rights reserved.</copyright></item><item><title>Reconfigurable Integrated Optoelectronics</title><link>http://www.hindawi.com/journals/aoe/2011/627802/</link><description>Integrated optics today is based upon chips of Si and InP.  The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry.  We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics.  This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.</description><Author>Richard Soref</Author><copyright>Copyright &amp;#xa9; 2011 Richard Soref. All rights reserved.</copyright></item><item><title>Single-SectionFabry-Perot Mode-Locked Semiconductor Lasers</title><link>http://www.hindawi.com/journals/aoe/2011/780373/</link><description>We present a review of the theoretical models and experimental verification of the single-section Fabry-Perot mode-locked semiconductor lasers based on multiple-spatial-mode (MSM) coupling.  The mode-locked operation at the repetition rates of 40&amp;#x2009;GHz and higher and the pulse width of a few picoseconds are confirmed by the intensity autocorrelation, the fast photo detection and RF spectrum, and the optical spectral interference measurement of ultrafast pulse.  The spatial mode coupling theory of single-section Fabry-Perot mode-locked semiconductor lasers is also reviewed, and the results are compared with the experimental observations.  The small signal modulation response of these lasers, which exhibits high-frequency responses well beyond the relaxation oscillation resonance limit, is also modeled theoretically, and the simulation is verified by the experimental measurements.</description><Author>Weiguo Yang</Author><copyright>Copyright &amp;#xa9; 2011 Weiguo Yang. All rights reserved.</copyright></item><item><title>Influence of Peak Wavelengths on Properties of Mixed-LED White-Light Sources</title><link>http://www.hindawi.com/journals/aoe/2010/437564/</link><description>The purpose of this investigation is to quantify the influence of the peak wavelength shifts in commercially available LEDs on the characteristics of the mixed-LED white-light sources. For this purpose, a tetrachromatic spectrum was optimized and then subjected to deviations in the peak wavelengths. A total of 882 combinations of peak wavelength values were evaluated, and the results are reported in terms of correlated colour temperature, colour-rendering properties, and radiant luminous efficacy. The results show that there can be significant changes in the characteristics of the source under these conditions. Such changes are highly likely to present problems when dealing with applications where an effective and accurate white-light source is important.</description><Author>Snjezana Soltic and Andrew N. Chalmers</Author><copyright>Copyright &amp;#xa9; 2010 Snjezana Soltic and Andrew N. Chalmers. All rights reserved.</copyright></item><item><title>Zinc Selenide-Based Schottky Barrier Detectors for  Ultraviolet-A and Ultraviolet-B Detection</title><link>http://www.hindawi.com/journals/aoe/2010/619571/</link><description>Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320&amp;#x02013;400&amp;#x02009;nm) and UV-B (280&amp;#x02013;320&amp;#x02009;nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50&amp;#x02009;mA/W and 10&amp;#x02009;mA/W, respectively.  A detector without a UV filter showed a maximum responsivity of about 110&amp;#x02009;mA/W at 375&amp;#x02009;nm wavelength. The speed of the unfiltered detector was found to be about 300&amp;#x02009;kHz primarily limited by the RC time constant determined largely by the detector area.</description><Author>V. Naval, C. Smith, V. Ryzhikov, S. Naydenov, F. Alves, and G. Karunasiri</Author><copyright>Copyright &amp;#xa9; 2010 V. Naval et al. All rights reserved.</copyright></item><item><title>Towards the Optimum Light Source Spectrum</title><link>http://www.hindawi.com/journals/aoe/2010/596825/</link><description>This paper is concerned with designing light source spectra for optimum luminous efficacy and colour rendering. We demonstrate that it is possible to design light sources that can provide both good colour rendering and high luminous efficacy by combining the outputs of a number of narrowband spectral constituents. Also, the achievable results depend on the numbers and wavelengths of the different spectral bands utilized in the mixture. Practical realization of these concepts has been demonstrated in this pilot study which combines a number of simulations with tests using real LEDs (light emitting diodes). Such sources are capable of providing highly efficient lighting systems with good energy conservation potential. Further research is underway to investigate the practicalities of our proposals in relation to large-scale light source production.</description><Author>Andrew Chalmers and Snjezana Soltic</Author><copyright>Copyright &amp;#xa9; 2010 Andrew Chalmers and Snjezana Soltic. All rights reserved.</copyright></item><item><title>PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties</title><link>http://www.hindawi.com/journals/aoe/2010/487406/</link><description>The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-SiNx:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45&amp;#x2009;GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge density. Our results show that the application of negative charge causes a substantial reduction in the surface recombination of samples with boron diffused emitters, even for high boron surface concentrations of 5&amp;#x00D7;1019&amp;#x2009;cm&amp;#x2212;3. The significant difference observed in surface recombination between boron diffused and undiffused sample under accumulation implies that the presence of boron diffusion has results in some degradation of the Si-SiNx interface. Further, (111) oriented surfaces appear more sensitive to the boron surface concentration than (100) oriented surfaces.</description><Author>Natalita M. Nursam, Yongling Ren, and Klaus J. Weber</Author><copyright>Copyright &amp;#x00A9; 2010 Natalita M. Nursam et al. All rights reserved.</copyright></item><item><title>Model and Simulation of a Tunable Birefringent Fiber Using Capillaries Filled with Liquid Ethanol for Magnetic Quasiphase Matching In-Fiber Isolator</title><link>http://www.hindawi.com/journals/aoe/2010/586986/</link><description>A technique to tune a magnetic quasi-phase matching in-fiber isolator through the application of stress induced by two mutually orthogonal capillary tubes filled with liquid ethanol is investigated numerically.  The results show that it is possible to &amp;#8220;tune&amp;#8221; the birefringence in these fibers over a limited range depending on the temperature at which the ethanol is loaded into the capillaries. Over this tuning range, the thermal sensitivity of the birefringence is an order-of-magnitude lower than conventional fibers, making this technique well suited for magnetic quasi-phase matching.</description><Author>Clint Zeringue and Gerald T. Moore</Author><copyright>Copyright &amp;#x00A9; 2010 Clint Zeringue and Gerald T. Moore. All rights reserved.</copyright></item><item><title>Magnetic Quasi-Phase Matching All-Fiber Isolator</title><link>http://www.hindawi.com/journals/aoe/2010/179813/</link><description>We have experimentally demonstrated an all-fiber optical isolator with 20&amp;#x2009;dB isolation. The result shows that the quasi-phase matching technique via a meter-long magnet array is highly feasible to generate more than 45 degrees of Faraday rotation in the fibers. The all-fiber isolator can also be temperature tuned to operate between 1048&amp;#x2009;nm and 1066&amp;#x2009;nm wavelength.</description><Author>Chunte A. Lu and Gerald T. Moore</Author><copyright>Copyright &amp;#x00A9; 2010 Chunte A. Lu and Gerald T. Moore. All rights reserved.</copyright></item><item><title>Model for a Torsional-Mode Ultrasonic Transducer for an Acousto-Optic In-Fiber Isolator</title><link>http://www.hindawi.com/journals/aoe/2010/823157/</link><description>Torsional ultrasound modes can couple the optical polarization states in a birefringent fiber. Polarization coupling produced by interaction with a higher-order torsional mode slightly above its cutoff may provide a route to producing an in-fiber isolator suitable for use in narrow-band high-power fiber amplifiers. This paper describes a model of a transducer generating
torsional modes in a cylindrical fiber. This model predicts that almost all of the power applied to the transducer is radiated into the desired mode. The paper also discusses effects produced by acoustic absorption and the dependence of the acoustic velocity on temperature.</description><Author>Gerald T. Moore</Author><copyright>Copyright &amp;#x00A9; 2010 Gerald T. Moore. All rights reserved.</copyright></item><item><title>High-Power ZBLAN Glass Fiber Lasers: Review and Prospect</title><link>http://www.hindawi.com/journals/aoe/2010/501956/</link><description>ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF), considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heat-dissipating technology.</description><Author>Xiushan Zhu and N. Peyghambarian</Author><copyright>Copyright &amp;#x00A9; 2010 Xiushan Zhu and N. Peyghambarian. All rights reserved.</copyright></item><item><title>Tensorial Model for Photolithography Aerial Image Simulation</title><link>http://www.hindawi.com/journals/aoe/2009/457549/</link><description>In this paper, we propose to adapt the multilinear algebra tools to the tensor of Transmission Cross-Coefficients (TCC) values for aerial image simulation in order to keep the data
tensor as a whole entity. This new approach implicitly extends the singular value decomposition (SVD) to tensors, that is, Higher Order SVD or TUCKER3 tensor
decomposition which is used to obtain lower rank-(K1,&amp;#x2009;K2,&amp;#x2009;K3,&amp;#x2009;K4) tensor approximation (LRTA (K1,&amp;#x2009;K2,&amp;#x2009;K3,&amp;#x2009;K4)). This model requires an Alternating Least Square (ALS) process known as TUCKALS3 algorithm. The needed number of kernels is estimated using two adapted criteria, well known in signal processing and information theory. For runtime improvement, we use the fixed point algorithm to calculate only the needed eigenvectors. This new approach leads to a fast and accurate algorithm to compute aerial images.</description><Author>Caroline Fossati, Salah Bourennane, Romuald Sabatier, and Antonio Di Giacomo</Author><copyright>Copyright &amp;#x00A9; 2009 Caroline Fossati et al. All rights reserved.</copyright></item><item><title>Forward and Backward Detectable Gray-Scale Data Storage System in Polymeric Material</title><link>http://www.hindawi.com/journals/aoe/2009/967613/</link><description>We describe a fast way to encode a gray-scale image with quadratic properties in polymer thin film doped with azo dye. Under a two photon microscopy setup, we induced disorientation in corona-poled azo dye copolymer thin films by a focused near infrared (IR) femtosecond laser beam of variable exposure time. In situ, the sample was then scan to detect the second harmonic signal. We have also tested the backward detection which can provide reading and writing through a single microscope objective. In addition, we were able to store binary 3D information in the bulk of a 50&amp;#x2009;&amp;#x03BC;m thick film of the same material.</description><Author>E. Sungur, D. Carrara, G. Taupier, A. Fort, L. Mager, A. Barsella, and K. D. Dorkenoo</Author><copyright>Copyright &amp;#x00A9; 2009 E. Sungur et al. All rights reserved.</copyright></item><item><title>Numerical Simulation of 980&amp;#x2009;nm-LD-Pumped Yb3+-Er3+-Tm3+-Codoped Fiber Amplifier for 1500&amp;#x2009;nm and 1600&amp;#x2009;nm Bands</title><link>http://www.hindawi.com/journals/aoe/2009/278105/</link><description>The theoretical model of Yb3+-Er3+-Tm3+-codoped fiber amplifier pumped by 980&amp;#x2009;nm laser 
is proposed,  and the rate and power propagation equations are 
numerically solved to analyze the dependences of the gains at 
1500&amp;#x2009;nm and 1600&amp;#x2009;nm bands on the activator 
concentrations, fiber length, pump power, and signal wavelength. 
The numerical results show that our model is in good agreement 
with experimental result, and with pump power of 200&amp;#x2009;mW and 
fiber length varying from 0.15 to 1.5&amp;#x2009;m, the gains at the 
two bands may reach 10.0&amp;#8211;20.0&amp;#x2009;dB when the codoping 
concentrations of  Yb3+, Er3+, and Tm3+ are in the ranges 1.0&amp;#8211;3.0&amp;#x00D7;1025, 1.0&amp;#8211;3.0&amp;#x00D7;1024, and 1.0&amp;#8211;3.0&amp;#x00D7;1024 ions/m3, respectively. The fiber parameters  may be optimized to flatten the gain spectra.</description><Author>Chun Jiang</Author><copyright>Copyright &amp;#x00A9; 2009 Chun Jiang. All rights reserved.</copyright></item><item><title>Transmission Performance Analysis of Fiber Optical Parametric Amplifiers for WDM System</title><link>http://www.hindawi.com/journals/aoe/2009/924340/</link><description>A numerical analysis is presented on the long-haul wavelength-division multiplexing (WDM) transmission system employing fiber-optic parametric amplifier (FOPA) cascades based on one-pump FOPA model with Raman Effect taken into account. The end-to-end equalization scheme is applied to optimize the system features in terms of proper output powers and signal-to-noise ratios (SNRs) in all the channels. The numerical results show that&amp;#8212;through adjusting the fiber spans along with the number of FOPAs as well as the channel powers at the terminals in a prescribed way&amp;#x02014;the transmission distance and system performance can be optimized. By comparing the results generated by different lengths of fiber span, we come to the optimal span length to achieve the best transmission performance. Furthermore, we make a comparison among the long-haul WDM transmission systems employing different inline amplifiers, namely, FOPA, erbium-doped fiber amplifier (EDFA), and Fiber Raman Amplifier (FRA). FOPA demonstrates its advantage over the other two in terms of system features.</description><Author>Xiaohong Jiang and Chun Jiang</Author><copyright>Copyright &amp;#x00A9; 2009 Xiaohong Jiang and Chun Jiang. All rights reserved.</copyright></item><item><title>Synthesis of Luminescent Ink from Europium-Doped Y2O3 Dispersed in Polyvinyl Alcohol Solution</title><link>http://www.hindawi.com/journals/aoe/2009/918351/</link><description>Luminescent ink from europium-doped  Y2O3 ( Y2O3:Eu) has been synthesized by two steps method: first, synthesis of luminescent powder of  Y2O3:Eu by simple heating of metallic nitrates in a polymer solution and second, dispersing the powder in a polyvinyl alcohol (PVA) solution. The stability of the ink (luminescent colloid) was strongly affected by mixing process of the powder and the solution. Mixing process must be performed for a long time (about 8 hours) at above room temperature to product stable colloids. We observed that mixing at 30&amp;#8211;40&amp;#x2218;C resulted in a stable and highly dispersed colloid. The writing test was performed on a white paper to show the potential use of the colloid for making security codes.</description><Author> Astuti, Mikrajuddin Abdullah, and  Khairurrijal</Author><copyright>Copyright &amp;#x00A9; 2009  et al. All rights reserved.</copyright></item><item><title>Holographic Polymer-Dispersed Liquid Crystals: Materials, Formation, and Applications</title><link>http://www.hindawi.com/journals/aoe/2008/684349/</link><description>By combining polymer-dispersed liquid crystal (PDLC) and holography, holographic PDLC (H-PDLC) has emerged as a new composite material for switchable or tunable optical devices. Generally, H-PDLC structures are created in a liquid crystal cell filled with polymer-dispersed liquid crystal materials by recording the interference pattern generated by two or more coherent laser beams which is a fast and single-step fabrication. With a relatively ideal phase separation between liquid crystals and polymers, periodic refractive index profile is formed in the cell and thus light can be diffracted. Under a suitable electric field, the light diffraction behavior disappears due to the index matching between liquid crystals and polymers. H-PDLCs show a fast switching time due to the small size of the liquid crystal droplets. So far, H-PDLCs have been applied in many promising applications in photonics, such as flat panel displays, switchable gratings, switchable lasers, switchable microlenses, and switchable photonic crystals. In this paper, we review the current state-of-the-art of H-PDLCs including the materials used to date, the grating formation dynamics and simulations, the optimization of electro-optical properties, the photonic applications, and the issues existed in H-PDLCs.</description><Author>Y. J. Liu and X. W. Sun</Author><copyright>Copyright &amp;#x00A9; 2008 Y. J. Liu and X. W. Sun. All rights reserved.</copyright></item><item><title>Optical Intensity Modulation in  an LiNbO3 Slab-Coupled Waveguide</title><link>http://www.hindawi.com/journals/aoe/2008/373259/</link><description>Optical intensity modulation has been demonstrated through switching the optical beam between the main core waveguide and a closely attached leaky slab waveguide by applying a low-voltage electrical field. Theory for simulating such an LiNbO3 slab-coupled waveguide structure was suggested, and the result indicates the possibility of making the spatial guiding mode large, circular and symmetric, which further allows the potential to significantly reduce the coupling losses with adjacent lasers and optical networks. Optical intensity modulation using electro-optic effect was experimentally demonstrated in a 5&amp;#x2009;cm long waveguide fabricated by using a procedure of soft proton exchange and then an overgrowth of thin LN film on top of a c-cut LiNbO3 wafer.</description><Author>Yalin Lu and Kitt Reinhardt</Author><copyright>Copyright &amp;#x00A9; 2008 Yalin Lu and Kitt Reinhardt. All rights reserved.</copyright></item><item><title>Advances in Evaporated Solid-Phase-Crystallized Poly-Si Thin-Film Solar Cells on Glass (EVA)</title><link>http://www.hindawi.com/journals/aoe/2008/532351/</link><description>Polycrystalline silicon thin-film solar cells on glass obtained by solid-phase crystallization (SPC) of PECVD-deposited a-Si precursor diodes are capable of producing large-area devices with respectable photovoltaic efficiency. This has not yet been shown for equivalent devices made from evaporated Si precursor diodes (&amp;#8220;EVA&amp;#8221; solar cells). We demonstrate that there are two main problems for the metallization of EVA solar cells: (i) shunting of the p-n junction when the air-side metal contact is deposited; (ii) formation of the glass-side contact with low contact resistance and without shunting. We present a working metallization scheme and first current-voltage and quantum efficiency results of 2&amp;#x2009;cm2 EVA solar cells. The best planar EVA solar cells produced so far achieved fill factors up to 64%, series resistance values in the range of 4-5&amp;#x2009;&amp;#x03A9;cm2, short-circuit current densities of up to 15.6&amp;#x2009;mA/cm2, and efficiencies of up to 4.25%. Using numerical device simulation, a diffusion length of about 4&amp;#x2009;&amp;#x03BC;m is demonstrated for such devices. These promising results confirm that the device fabrication scheme presented in this paper is well suited for the metallization of EVA solar cells and that the electronic properties of evaporated SPC poly-Si materials are sufficient for PV applications.</description><Author>O. Kunz, Z. Ouyang, J. Wong, and A. G. Aberle</Author><copyright>Copyright &amp;#x00A9; 2008 O. Kunz et al. All rights reserved.</copyright></item><item><title>Analysis of the Optical Properties of Screen-Printed and Aerosol-Printed and Plated Fingers of Silicon Solar Cells</title><link>http://www.hindawi.com/journals/aoe/2008/759340/</link><description>One main efficiency loss in industrial solar cells is the shading of the cell caused by the metal front side contacts. With the aerosol-printing technique plus an additional light-induced plating (LIP) step, not only is the geometrical contact width narrowed compared to screen-printed contacts but also the shape of the finger changes. In this work, the effective shading of different finger types is analysed with two different measurement methods. The essential parameter for characterising the finger is the effective width which can be reduced drastically compared to the geometrical width due to total internal reflection at the glass-air layer and the reflection from the roundish edges of the contact fingers into the cell. This parameter was determined with different methods. It could be shown that for aerosol-printed fingers the effective (optical) width is only 38% of its geometrical width, while for standard screen-printed fingers it is 47%. The measured values are compared to a theoretical model for an aerosol-printed and plated finger and are in good agreement.</description><Author>R. Woehl, M. H&amp;#246;rteis, and S. W. Glunz</Author><copyright>Copyright &amp;#x00A9; 2008 R. Woehl et al. All rights reserved.</copyright></item><item><title>PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells</title><link>http://www.hindawi.com/journals/aoe/2008/485467/</link><description>A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60&amp;#x2009;cm/s (after firing) and below 30&amp;#x2009;cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680&amp;#x2009;mV. Fully finished solar cells with up to 20.0&amp;#37; energy conversion efficiency are presented. A fit of the cell&amp;#39;s internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell&amp;#39;s rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different 
stages.</description><Author>M. Hofmann, S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S. W. Glunz, and R. Preu</Author><copyright>Copyright &amp;#x00A9; 2008 M. Hofmann et al. All rights reserved.</copyright></item><item><title>The Subwavelength Optical Field Confinement in a Multilayered Microsphere with Quasiperiodic Spherical Stack</title><link>http://www.hindawi.com/journals/aoe/2008/781524/</link><description>We study the frequency spectrum of nanoemitters 
placed in a microsphere with a quasiperiodic subwavelength 
spherical stack. The spectral evolution of transmittancy at the 
change of thickness of two-layer blocks, constructed following the 
Fibonacci sequence, is investigated. When the number of layers 
(Fibonacci order) increases, the structure of spectrum acquires a 
fractal form. Our calculations show the radiation confinement and 
gigantic field enhancement, when the ratio of layers&amp;#8217; widths in 
twolayer blocks of the stack is close to the golden mean 
value.</description><Author>Gennadiy N. Burlak and A. Diaz-de-Anda</Author><copyright>Copyright &amp;#x00A9; 2008 Gennadiy N. Burlak and A. Diaz-de-Anda. All rights reserved.</copyright></item><item><title>Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays</title><link>http://www.hindawi.com/journals/aoe/2008/739135/</link><description>We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.</description><Author>E. U. Donev, J. Y. Suh, R. Lopez, L. C. Feldman, and R. F. Haglund Jr.</Author><copyright>Copyright &amp;#x00A9; 2008 E. U. Donev et al. All rights reserved.</copyright></item><item><title>Anisotropic Left-Handed and &amp;#x03BC;-Negative Slab Waveguides: Physics and Device Applications</title><link>http://www.hindawi.com/journals/aoe/2007/046861/abs/</link><description>We study the properties of various anisotropic left-handed slab waveguides. The analysis is extended to anisotropic &amp;#x03BC;-negative slab waveguides. The possible existence of the plasmon modes in various anisotropic slab waveguide configurations is discussed. An FDTD program is developed to investigate
the potential device applications of these anisotropic structures. A new signal detector and a two-channel
harmonic separator multiplexer are designed employing the &amp;#x03BC;-negative slab waveguide.</description><Author>Hamidreza Salehi, Sujeet K. Chaudhuri, and Raafat R. Mansour</Author><copyright>Copyright &amp;#x00A9; 2007 Hamidreza  Salehi et al. All rights reserved.</copyright></item></channel></rss>
