Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

Figure 1

(a) Transmission of electron micrograph showing a cross-section of an MBE grown, vertically self-aligned Si/SiGe cluster (or 3D) multilayer structure. (b) Schematic showing typical Si and Ge atomic concentrations within an SiGe cluster measured along a horizontal axis running through the middle of the cluster (see the dashed line in Figure 1(a)).

(a)

(b)