Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 2
Comparison between
low temperature ( K) PL spectra in (a) an SiGe wetting layer with ~20% Ge
concentration and (b) undoped crystalline Si (c–Si). Note the dramatically
different intensity ratios between the NP and TO phonon PL lines of each
sample.
