Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 3
(a) Low
temperature ( K) PL spectra in (a) MBE grown
Si/Si1-xGex 3D NSs with the indicated average Ge atomic
concentration x and (d) in Si/SiGe 3D NSs grown by CVD. The characteristic
phonon-assisted transitions are indicated. PL spectra in CVD samples show a
strong spectral shift toward higher photon energy when the excitation intensity
is increased by approximately 5 times from trace (i) to trace (ii) (note the
linear intensity scale).
